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1

Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects

Fischetti, Massimo, Laux, Steven

Journal:

Physical Review B

Year:

1988

Language:

english

File:

PDF, 1.28 MB

english, 1988

2

Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Jin, Seonghoon, Fischetti, Massimo V., Tang, Ting-wei

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 609 KB

english, 2007

3

Theoretical Study of the Gate Leakage Current in Sub-10-nm Field-Effect Transistors

Fischetti, Massimo V., Fu, Bo, Vandenberghe, William G.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

4

interface based on hot-hole injection from the anode

Fischetti, Massimo V.

Journal:

Physical Review B

Year:

1985

Language:

english

File:

PDF, 745 KB

english, 1985

5

[Graduate Texts in Physics] Advanced Physics of Electron Transport in Semiconductors and Nanostructures ||

Fischetti, Massimo V., Vandenberghe, William G.

Year:

2016

Language:

english

File:

PDF, 12.70 MB

english, 2016

6

Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs

Jiseok Kim, Siddarth A. Krishnan, Sudarshan Narayanan, Michael P. Chudzik, Massimo V. Fischetti

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 806 KB

english, 2012

7

Electronic band structure calculations for biaxially strained Si, Ge, and IIIâV semiconductors

Kim, Jiseok, Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.59 MB

english, 2010

8

Monte Carlo Solution to the Problem of High-Field Electron Heating in Si

Fischetti, Massimo V.

Journal:

Physical Review Letters

Year:

1984

Language:

english

File:

PDF, 186 KB

english, 1984

9

Charged impurity scattering in top-gated graphene nanostructures

Ong, Zhun-Yong, Fischetti, Massimo V.

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 296 KB

english, 2012

10

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - One-flux theory of saturated drain current in nanoscale transistors

Tang, Ting-wei, Fischetti, Massimo V., Jin, Seonghoon, Sano, Nobuyuki

Year:

2011

Language:

english

File:

PDF, 357 KB

english, 2011

11

The importance of the anode field in controlling the generation rate of the donor states at the Si–SiO2 interface

Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 477 KB

english, 1984

12

Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons

Vandenberghe, William G., Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.10 MB

english, 2014

13

Erratum: “Theory of electron transport in small semiconductor devices using the Pauli master equation” [J. Appl. Phys. 83, 270 (1998)]

Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 310 KB

english, 1998

14

Figure of merit for and identification of sub-60 mV/decade devices

Vandenberghe, William G., Verhulst, Anne S., Sorée, Bart, Magnus, Wim, Groeseneken, Guido, Smets, Quentin, Heyns, Marc, Fischetti, Massimo V.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 468 KB

english, 2013

15

[Graduate Texts in Physics] Advanced Physics of Electron Transport in Semiconductors and Nanostructures || Scattering with Ionized Impurities

Fischetti, Massimo V., Vandenberghe, William G.

Year:

2016

Language:

english

File:

PDF, 163 KB

english, 2016

16

[Graduate Texts in Physics] Advanced Physics of Electron Transport in Semiconductors and Nanostructures || Overview of Quantum-Transport Formalisms

Fischetti, Massimo V., Vandenberghe, William G.

Year:

2016

Language:

english

File:

PDF, 249 KB

english, 2016

17

[Graduate Texts in Physics] Advanced Physics of Electron Transport in Semiconductors and Nanostructures || * Electronic Structure of Low-Dimensionality Systems

Fischetti, Massimo V., Vandenberghe, William G.

Year:

2016

Language:

english

File:

PDF, 5.98 MB

english, 2016

18

[Graduate Texts in Physics] Advanced Physics of Electron Transport in Semiconductors and Nanostructures || Dielectric Properties of Semiconductors

Fischetti, Massimo V., Vandenberghe, William G.

Year:

2016

Language:

english

File:

PDF, 488 KB

english, 2016

19

Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors

Fang, Jingtian, Vandenberghe, William G., Fu, Bo, Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 980 KB

english, 2016

20

Imperfect two-dimensional topological insulator field-effect transistors

Vandenberghe, William G., Fischetti, Massimo V.

Journal:

Nature Communications

Year:

2017

Language:

english

File:

PDF, 644 KB

english, 2017

21

Understanding the Average Electron-Hole-Pair Creation-Energy in Silicon and Germanium based on Full-band Monte Carlo Simulations

Fang, Jingtian, Reaz, Mahmud, Weeden-Wright, Stephanie L., Schrimpf, Ronald D., Reed, Robert A., Weller, Robert A., Fischetti, Massimo V., Pantelides, Sokrates T.

Journal:

IEEE Transactions on Nuclear Science

Year:

2018

Language:

english

File:

PDF, 5.90 MB

english, 2018

22

[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Channel Length Scaling Limit for LDMOS Field-Effect Transistors: Semi-classical and Quantum Analysis

Saadat, Ali, Vyas, Pratik B., Put, Maarten L. Van de, Fischetti, Massimo V., Edwards, Hal, Vandenberghe, William G.

Year:

2020

File:

PDF, 1.30 MB

2020

23

A local branching heuristic for mixed-integer programs with 2-level variables, with an application to a telecommunication network design problem

Matteo Fischetti, Carlo Polo, Massimo Scantamburlo

Journal:

Year:

2004

Language:

english

File:

PDF, 260 KB

english, 2004

24

Hole transport in p-channel Si MOSFETs

Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti

Journal:

Microelectronics Journal

Year:

2005

Language:

english

File:

PDF, 239 KB

english, 2005

25

Band-Structure and Quantum Effects on Hole Transport inp-MOSFETs

Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti

Journal:

Journal of Computational Electronics

Year:

2005

Language:

english

File:

PDF, 206 KB

english, 2005

26

Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering

Terrance O’Regan, Massimo Fischetti

Journal:

Journal of Computational Electronics

Year:

2007

Language:

english

File:

PDF, 229 KB

english, 2007

27

Transradial Percutaneous Coronary Interventions Using Sheathless Guiding Catheters: A Multicenter Registry

ALESSANDRO SCIAHBASI, MASSIMO MANCONE, BERNARDO CORTESE, GIANLUCA PENDENZA, ENRICO ROMAGNOLI, DIONIGI FISCHETTI, FRANCESCO TOMASSINI, GENNARO SARDELLA, ERNESTO LIOY

Journal:

Journal of Interventional Cardiology

Year:

2011

Language:

english

File:

PDF, 118 KB

english, 2011

28

The myosin motor in muscle generates a smaller and slower working stroke at higher load

Reconditi, Massimo, Linari, Marco, Lucii, Leonardo, Stewart, Alex, Sun, Yin-Biao, Boesecke, Peter, Narayanan, Theyencheri, Fischetti, Robert F., Irving, Tom, Piazzesi, Gabriella

Journal:

Year:

2004

Language:

english

File:

PDF, 280 KB

english, 2004

29

Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

Fischetti, Massimo V., Neumayer, Deborah A., Cartier, Eduard A.

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 604 KB

english, 2001

30

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Two-dimensional quantum mechanical modeling of band-to-band tunneling in indirect semiconductors

Vandenberghe, William G., Soree, Bart, Magnus, Wim, Fischetti, Massimo V., Verhulst, Anne S., Groeseneken, Guido

Year:

2011

Language:

english

File:

PDF, 774 KB

english, 2011

31

Impact of field-induced quantum confinement in tunneling field-effect devices

Vandenberghe, William G., Soree, Bart, Magnus, Wim, Groeseneken, Guido, Fischetti, Massimo V.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 377 KB

english, 2011

32

Large rearrangements detected by MLPA, point mutations, and survey of the frequency of mutations within the SLC3A1 and SLC7A9 genes in a cohort of 172 cystinuric Italian patients

Luigi Bisceglia, Lucia Fischetti, Patrizia De Bonis, Orazio Palumbo, Bartolomeo Augello, Pietro Stanziale, Massimo Carella, Leopoldo Zelante

Journal:

Molecular Genetics and Metabolism

Year:

2010

Language:

english

File:

PDF, 1014 KB

english, 2010

33

Structural, electronic, and transport properties of silicane nanoribbons

Kim, Jiseok, Fischetti, Massimo V., Aboud, Shela

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 1.59 MB

english, 2012

34

One-flux theory of saturated drain current in nanoscale transistors

Tang, Ting-wei, Fischetti, Massimo V., Jin, Seonghoon, Sano, Nobuyuki

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 638 KB

english, 2012

35

Theory of interfacial plasmon-phonon scattering in supported graphene

Ong, Zhun-Yong, Fischetti, Massimo V.

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 644 KB

english, 2012

36

Empirical pseudopotential calculations of the band structure and ballistic conductance of strained [001], [110], and [111] silicon nanowires

Kim, Jiseok, Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 6.68 MB

english, 2011

37

Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach

Vandenberghe, William, SoreÌe, Bart, Magnus, Wim, Fischetti, Massimo V.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 799 KB

english, 2011

38

Theory of remote phonon scattering in top-gated single-layer graphene

Ong, Zhun-Yong, Fischetti, Massimo V.

Journal:

Physical Review B

Year:

2013

Language:

english

File:

PDF, 1.66 MB

english, 2013

39

Hot-carrier charge trapping and trap generation in HfO[sub 2] and Al[sub 2]O[sub 3] field-effect transistors

Kumar, Arvind, Fischetti, Massimo V., Ning, Tak H., Gusev, Evgeni

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 486 KB

english, 2003

40

Interfacial graphene growth in the Ni/SiO2 system using pulsed laser deposition

Hemani, Gautam K., Vandenberghe, William G., Brennan, Barry, Chabal, Yves J., Walker, Amy V., Wallace, Robert M., Quevedo-Lopez, Manuel, Fischetti, Massimo V.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.60 MB

english, 2013

41

Mobility enhancement and temperature dependence in top-gated single-layer MoS

Ong, Zhun-Yong, Fischetti, Massimo V.

Journal:

Physical Review B

Year:

2013

Language:

english

File:

PDF, 495 KB

english, 2013

42

Pseudopotential-based studies of electron transport in graphene and graphene nanoribbons

Fischetti, Massimo V, Kim, Jiseok, Narayanan, Sudarshan, Ong, Zhun-Yong, Sachs, Catherine, Ferry, David K, Aboud, Shela J

Journal:

Journal of Physics Condensed Matter

Year:

2013

Language:

english

File:

PDF, 5.83 MB

english, 2013

43

An empirical pseudopotential approach to surface and line-edge roughness scattering in nanostructures: Application to Si thin films and nanowires and to graphene nanoribbons

Fischetti, Massimo V., Narayanan, Sudarshan

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 2.58 MB

english, 2011

44

Theoretical analysis of high-field transport in graphene on a substrate

Serov, Andrey Y., Ong, Zhun-Yong, Fischetti, Massimo V., Pop, Eric

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.44 MB

english, 2014

45

[IEEE 13th International Workshop on Computational Electronics (IWCE) - Beijing, China (2009.05.27-2009.05.29)] 2009 13th International Workshop on Computational Electronics - Anatomy of Carrier Backscattering in Silicon Nanowire Transistors

Jin, Seonghoon, Tang, Ting-wei, Fischetti, Massimo V.

Year:

2009

Language:

english

File:

PDF, 333 KB

english, 2009

46

Remote Phonon Scattering in Si and Ge with SiO 2 and HfO 2 Insulators: Does the Electron Mobility Determine Short Channel Performance?

O'Regan, Terrance, Fischetti, Massimo

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 188 KB

english, 2007

47

[IEEE 2010 International Workshop on Computational Electronics (IWCE) - Pisa, Italy (2010.10.26-2010.10.29)] 2010 14th International Workshop on Computational Electronics - Band structure and ballistic conductance of strained Si nanowires

Kim, Jiseok, Fischetti, Massimo V.

Year:

2010

Language:

english

File:

PDF, 763 KB

english, 2010

48

[IEEE 2014 International Workshop on Computational Electronics (IWCE) - Paris, France (2014.6.3-2014.6.6)] 2014 International Workshop on Computational Electronics (IWCE) - Reduction of the normal-superfluid transition temperature in gated bilayer graphene

Fischetti, Massimo V., Aboud, Shela J.

Year:

2014

Language:

english

File:

PDF, 545 KB

english, 2014

49

[IEEE 2010 International Workshop on Computational Electronics (IWCE) - Pisa, Italy (2010.10.26-2010.10.29)] 2010 14th International Workshop on Computational Electronics - Delta-doped HfO2/In0.53Ga0.47As inversion layers: Density-of-states bottleneck and electron mobility

O'Regan, Terrance, Hurley, Paul, Fischetti, Massimo

Year:

2010

Language:

english

File:

PDF, 256 KB

english, 2010

50

[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Post-Si-CMOS Devices - Scaling FETs to (Beyond?) 10 nm: From Semiclassical to Quantum Models

Fischetti, Massimo V.

Year:

2012

Language:

english

File:

PDF, 316 KB

english, 2012